Odor:: | Odorless | Color: | Colorless |
---|---|---|---|
Air & Water Reactions: | HIGHLY FLAMMABLE GAS. VERY TOXIC. VERY TOXIC BY INHALATION. RISK OF EXPLOSION IF HEATED UNDER CONFENEMENT. | Cylinders Certificate:: | GB, ISO, CE, DOT |
Supply Ability:: | 30 Ton Per Month | Application:: | Semi Industry |
Package:: | 30-1000kg/per Cylinder | Cylinders Volume:: | 30LB,50LB Disposable Cylinder |
Highlight: | electric gas,purity plus specialty gases |
Electronic Specialty Gases C4F6 Used During Semiconductor Fabrication And The manufacturing of TFT-LCDs
Description:
C4F6 is a new environmentally friendly, high-performance , etch chemistry for its Dielectric Etch IPS(TM) Centura(R) and Dielectric Etch Super e(TM) Centura systems. The C4F6 gas can provides higher etch rates, better profile control and higher selectivity to photoresist in critical dielectric etch applications.
C4F6 gas improves dielectric etch process results in key areas such as copper dual damascene, self-aligned contact and high aspect ratio contact etch applications, including low K materials. It also exhibits significant environmental benefits over current etch chemistries.
The semiconductor industry has been investigating new gas chemistries in an effort to reduce global warming emissions. In addition to improving etch process performance, C4F6 gas features low global warming emissions and zero ozone depletion potential.
High Pressure Gas | |
Molecular Weight | 162.03 |
UN Code | 3160 |
Permissible Concentration | Unsettled(Reference value5ppm) |
Description | Colorless Gas |
Odor | Odorless |
Specific Gravity | 5.892 |
Boiling Point | 5.5℃ |
Density(Liquid) | 1.44kg/ℓ(15℃) |
Applications:
1. C:F ratio in C4F6molecule is high enough to control the amount of polymer on the chamber surface and wafer surface with respect to F etching radicals so achieving superior results over other gases to produce vertical profile. More important, its intrinsic characteristics allow high selectivity to substrate or photoresist and wider process window compared to C4F8.
2. This behaviour is particularly beneficial to address the need for sub 0.25 m requirements. Ar is being used as a carrier gas but nitride selectivity results a decreasing function for Ar.